SIHB23N60E Datasheet. Specs and Replacement
Type Designator: SIHB23N60E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
Package: TO-263
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SIHB23N60E substitution
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SIHB23N60E datasheet
sihb23n60e.pdf
SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.158 Reduced switching and conduction losses Qg max. (nC) 95 Ultra low gate charge (Qg) Qgs (nC) 16 Avalanche energy rated (UIS) Qgd (nC) 25 ... See More ⇒
sihb22n65e.pdf
SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 32 ... See More ⇒
sihb20n50e.pdf
SiHB20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.184 Reduced switching and conduction losses Qg max. (nC) 92 Low gate charge (Qg) Qgs (nC) 10 Avalanche energy rated (UIS) Qgd (nC) 19 Mater... See More ⇒
Detailed specifications: SIHB15N50E, SIHB15N60E, SIHB15N65E, SIHB16N50C, SIHB20N50E, SIHB22N60E, SIHB22N60S, SIHB22N65E, FTP08N06A, SIHB24N65E, SIHB28N60EF, SIHB30N60E, SIHB33N60E, SIHB33N60EF, SIHB6N65E, SIHB8N50D, SIHD12N50E
Keywords - SIHB23N60E MOSFET specs
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