SIHB24N65E MOSFET Datasheet: N-Ch, 650V, 24A. Full specification with pinout and replacement list

SIHB24N65E Specs and Replacement

Type Designator: SIHB24N65E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 122 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: TO-263

SIHB24N65E substitution

- MOSFET ⓘ Cross-Reference Search

SIHB24N65E datasheet

..1. Size:201K vishay
sihb24n65e.pdf pdf_icon

... See More ⇒

9.1. Size:209K vishay
sihb23n60e.pdf pdf_icon

SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.158 Reduced switching and conduction losses Qg max. (nC) 95 Ultra low gate charge (Qg) Qgs (nC) 16 Avalanche energy rated (UIS) Qgd (nC) 25 ... See More ⇒

9.2. Size:209K vishay
sihb22n65e.pdf pdf_icon

SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 32 ... See More ⇒

9.3. Size:200K vishay
sihb20n50e.pdf pdf_icon

SiHB20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.184 Reduced switching and conduction losses Qg max. (nC) 92 Low gate charge (Qg) Qgs (nC) 10 Avalanche energy rated (UIS) Qgd (nC) 19 Mater... See More ⇒