SIHB30N60E Datasheet. Specs and Replacement

Type Designator: SIHB30N60E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-263

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SIHB30N60E substitution

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SIHB30N60E datasheet

 ..1. Size:192K  vishay
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SIHB30N60E

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 9.1. Size:151K  vishay
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SIHB30N60E

SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS... See More ⇒

 9.2. Size:200K  vishay
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SIHB30N60E

SiHB33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.098 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 155 Low input capacitance (Ciss) Qgs (nC) 22 Reduced s... See More ⇒

Detailed specifications: SIHB16N50C, SIHB20N50E, SIHB22N60E, SIHB22N60S, SIHB22N65E, SIHB23N60E, SIHB24N65E, SIHB28N60EF, 8N65, SIHB33N60E, SIHB33N60EF, SIHB6N65E, SIHB8N50D, SIHD12N50E, SIHD3N50D, SIHD3N50DA, SIHD5N50D

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