SIHB8N50D Datasheet. Specs and Replacement

Type Designator: SIHB8N50D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-263

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SIHB8N50D datasheet

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SIHB8N50D

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Detailed specifications: SIHB22N65E, SIHB23N60E, SIHB24N65E, SIHB28N60EF, SIHB30N60E, SIHB33N60E, SIHB33N60EF, SIHB6N65E, 3401, SIHD12N50E, SIHD3N50D, SIHD3N50DA, SIHD5N50D, SIHD6N62E, SIHD6N65E, SIHD7N60E, SIHF10N40D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.