SIHB8N50D Specs and Replacement
Type Designator: SIHB8N50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-263
SIHB8N50D substitution
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SIHB8N50D datasheet
Detailed specifications: SIHB22N65E , SIHB23N60E , SIHB24N65E , SIHB28N60EF , SIHB30N60E , SIHB33N60E , SIHB33N60EF , SIHB6N65E , RU7088R , SIHD12N50E , SIHD3N50D , SIHD3N50DA , SIHD5N50D , SIHD6N62E , SIHD6N65E , SIHD7N60E , SIHF10N40D .
Keywords - SIHB8N50D MOSFET specs
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SIHB8N50D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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