All MOSFET. SIHD3N50DA Datasheet

 

SIHD3N50DA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHD3N50DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO-252

 SIHD3N50DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHD3N50DA Datasheet (PDF)

 ..1. Size:123K  vishay
 sihd3n50da.pdf

SIHD3N50DA SIHD3N50DA

SiHD3N50DAwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 550- Low area specific on-resistanceRDS(on) max. at 25 C () VGS = 10 V 3.2- Low input capacitance (Ciss)Qg (max.) (nC) 12- Reduced capacitive switching lossesQgs (nC) 2- High body diode ruggednessQgd (nC) 3- Avalanche energy rated (UIS)Co

 5.1. Size:198K  vishay
 sihd3n50d.pdf

SIHD3N50DA SIHD3N50DA

SiHD3N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. () at 25 C VGS = 10 V 3.2 - Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching Losses- High Body Diode RuggednessQgs (nC) 3Available- Avalanche Energy Rated (UIS)Qgd

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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