All MOSFET. SIHD5N50D Datasheet

 

SIHD5N50D MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHD5N50D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 104 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 34 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-252

SIHD5N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHD5N50D Datasheet (PDF)

1.1. sihd5n50d.pdf Size:198K _upd-mosfet

SIHD5N50D
SIHD5N50D

SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses - High Body Diode Ruggedness Qgs (nC) 3 Available - Avalanche Energy Rated (UIS) Qgd

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
Back to Top

 


SIHD5N50D
  SIHD5N50D
  SIHD5N50D
 

social 

LIST

Last Update

MOSFET: CHM1012TGP | CHM1012PAGP | CHM1012LPAGP | CHM09N7NGP | CHM09N6NGP | CHM06N5NGP | CHM05P03NGP | CHM05N65PAGP | CHM04N6NGP | CHM0410JGP | CHM02N7PAGP | CHM02N7NGP | CHM02N6PAGP | CHM02N6GPAGP | CHM02N6ANGP |

 

 

 
Back to Top