SIHD5N50D Specs and Replacement
Type Designator: SIHD5N50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 34 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-252
SIHD5N50D substitution
- MOSFET ⓘ Cross-Reference Search
SIHD5N50D datasheet
sihd5n50d.pdf
SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses - High Body Diode Ruggedness Qgs (nC) 3 Available - Avalanche Energy Rated (UIS) Qgd ... See More ⇒
Detailed specifications: SIHB30N60E , SIHB33N60E , SIHB33N60EF , SIHB6N65E , SIHB8N50D , SIHD12N50E , SIHD3N50D , SIHD3N50DA , 60N06 , SIHD6N62E , SIHD6N65E , SIHD7N60E , SIHF10N40D , SIHF12N50C , SIHF12N60E , SIHF12N65E , SIHF15N60E .
History: IXFK55N50F
Keywords - SIHD5N50D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXFK55N50F
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