All MOSFET. SIHF10N40D Datasheet

 

SIHF10N40D Datasheet and Replacement


   Type Designator: SIHF10N40D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-220FP
 

 SIHF10N40D substitution

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SIHF10N40D Datasheet (PDF)

 ..1. Size:168K  vishay
 sihf10n40d.pdf pdf_icon

SIHF10N40D

SiHF10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 7

 9.1. Size:292K  vishay
 sihp16n50c sihb16n50c sihf16n50c.pdf pdf_icon

SIHF10N40D

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

 9.2. Size:160K  vishay
 sihf15n65e.pdf pdf_icon

SIHF10N40D

SiHF15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (U

 9.3. Size:134K  vishay
 sihf12n65e.pdf pdf_icon

SIHF10N40D

SiHF12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

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Datasheet: SIHB8N50D , SIHD12N50E , SIHD3N50D , SIHD3N50DA , SIHD5N50D , SIHD6N62E , SIHD6N65E , SIHD7N60E , IRFZ44N , SIHF12N50C , SIHF12N60E , SIHF12N65E , SIHF15N60E , SIHF15N65E , SIHF16N50C , SIHF18N50C , SIHF18N50D .

History: AP120N04P

Keywords - SIHF10N40D MOSFET datasheet

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