All MOSFET. SIHF22N60E Datasheet

 

SIHF22N60E MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHF22N60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 68 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO-220FP

SIHF22N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHF22N60E Datasheet (PDF)

1.1. sihf22n60e.pdf Size:165K _upd-mosfet

SIHF22N60E
SIHF22N60E

SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.18 • Reduced Switching and Conduction Losses Qg max. (nC) 86 • Ultra Low Gate Charge (Qg) Qgs (nC) 14 • Avalanche Energy Rated (UIS) Qgd (nC) 26 •

1.2. sihf22n60s.pdf Size:165K _upd-mosfet

SIHF22N60E
SIHF22N60E

SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS at TJ max. (V) 650 • High EAR Capability RDS(on) max. at 25 °C () VGS = 10 V 0.190 • Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron Configuration Single • dV/dt Ruggedness • Ultra Low G

 1.3. sihf22n60s.pdf Size:163K _vishay

SIHF22N60E
SIHF22N60E

Datasheet: SIHF12N50C , SIHF12N60E , SIHF12N65E , SIHF15N60E , SIHF15N65E , SIHF16N50C , SIHF18N50C , SIHF18N50D , 2N7000 , SIHF22N60S , IRF7404PBF-1 , IRF7404QPBF , IRF7404PBF , IRF7406GPBF , IRF7406PBF , IRF7406PBF-1 , IRF740ALPBF .

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