All MOSFET. SIHF22N60S Datasheet

 

SIHF22N60S Datasheet and Replacement


   Type Designator: SIHF22N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220FP
 

 SIHF22N60S substitution

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SIHF22N60S Datasheet (PDF)

 ..1. Size:165K  vishay
 sihf22n60s.pdf pdf_icon

SIHF22N60S

SiHF22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

 5.1. Size:165K  vishay
 sihf22n60e.pdf pdf_icon

SIHF22N60S

SiHF22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

 6.1. Size:163K  vishay
 sihf22n65e.pdf pdf_icon

SIHF22N60S

SiHF22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesAvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Availa

 9.1. Size:167K  vishay
 sihf23n60e.pdf pdf_icon

SIHF22N60S

SiHF23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16Qgd (nC) 25 Avalanche energy rated (UIS)Con

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Datasheet: SIHF12N60E , SIHF12N65E , SIHF15N60E , SIHF15N65E , SIHF16N50C , SIHF18N50C , SIHF18N50D , SIHF22N60E , IRFP460 , IRF7404PBF-1 , IRF7404QPBF , IRF7404PBF , IRF7406GPBF , IRF7406PBF , IRF7406PBF-1 , IRF740ALPBF , IRF740APBF .

Keywords - SIHF22N60S MOSFET datasheet

 SIHF22N60S cross reference
 SIHF22N60S equivalent finder
 SIHF22N60S lookup
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 SIHF22N60S replacement

 

 
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