All MOSFET. IRF7406GPBF Datasheet

 

IRF7406GPBF Datasheet and Replacement


   Type Designator: IRF7406GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 59 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8
 

 IRF7406GPBF substitution

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IRF7406GPBF Datasheet (PDF)

 ..1. Size:262K  international rectifier
 irf7406gpbf.pdf pdf_icon

IRF7406GPBF

PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

 7.1. Size:235K  international rectifier
 irf7406pbf.pdf pdf_icon

IRF7406GPBF

PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 7.2. Size:231K  international rectifier
 irf7406pbf-1.pdf pdf_icon

IRF7406GPBF

IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment

 7.3. Size:114K  international rectifier
 irf7406.pdf pdf_icon

IRF7406GPBF

PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te

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