IRF7433 Datasheet and Replacement
Type Designator: IRF7433
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 512 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO-8
IRF7433 substitution
IRF7433 Datasheet (PDF)
irf7433pbf.pdf

PD - 95305IRF7433PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 24m@VGS = -4.5V -8.7Al Surface Mount30m@VGS = -2.5V -7.4Al Available in Tape & Reel46m@VGS = -1.8V -6.3Al Lead-FreeDescriptionA1 8S DThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques to 2 7S Dachieve
irf7433.pdf

PD -94056IRF7433HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 24m@VGS = -4.5V -8.7A Surface Mount30m@VGS = -2.5V -7.4A Available in Tape & Reel46m@VGS = -1.8V -6.3ADescriptionA1 8S DThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques to 2 7S Dachieve the extremely low on-
irf7434.pdf

PD - 9.1709IRF7343PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE TN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 55V -55V3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-C H ANN EL MO SFE TRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifie
Datasheet: IRF7420PBF , IRF7420PBF-1 , IRF7421D1PBF , IRF7422D2PBF , IRF7424GPBF , IRF7424PBF , IRF7425PBF , IRF7425PBF-1 , 4435 , IRF7433PBF , IRF744PBF , IRF7450PBF , IRF7451PBF , IRF7452PBF , IRF7452QPBF , IRF7453 , IRF7453PBF .
Keywords - IRF7433 MOSFET datasheet
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History: FDMC6686P | SI4833DY



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