IRF7433PBF MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF7433PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 8.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 512 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SO-8

IRF7433PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF7433PBF Datasheet (PDF)

..1. Size:164K international rectifier
irf7433pbf.pdf

PD - 95305IRF7433PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 24m@VGS = -4.5V -8.7Al Surface Mount30m@VGS = -2.5V -7.4Al Available in Tape & Reel46m@VGS = -1.8V -6.3Al Lead-FreeDescriptionA1 8S DThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques to 2 7S Dachieve

7.1. Size:105K international rectifier
irf7433.pdf

PD -94056IRF7433HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 24m@VGS = -4.5V -8.7A Surface Mount30m@VGS = -2.5V -7.4A Available in Tape & Reel46m@VGS = -1.8V -6.3ADescriptionA1 8S DThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques to 2 7S Dachieve the extremely low on-

8.1. Size:149K international rectifier
irf7434.pdf

PD - 9.1709IRF7343PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE TN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 55V -55V3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-C H ANN EL MO SFE TRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifie

8.2. Size:482K st
irf740 irf741 irf742 irf743-fi.pdf