IRL510 Specs and Replacement
Type Designator: IRL510
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: TO220
IRL510 substitution
- MOSFET ⓘ Cross-Reference Search
IRL510 datasheet
irl510pbf.pdf
PD - 95406 IRL510PbF Lead-Free 6/17/04 Document Number 91297 www.vishay.com 1 IRL510PbF Document Number 91297 www.vishay.com 2 IRL510PbF Document Number 91297 www.vishay.com 3 IRL510PbF Document Number 91297 www.vishay.com 4 IRL510PbF Document Number 91297 www.vishay.com 5 IRL510PbF Document Number 91297 www.vishay.com 6 IRL510PbF TO-220AB Package Outline ... See More ⇒
irl510pbf sihl510.pdf
IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si... See More ⇒
irl510 sihl510.pdf
IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si... See More ⇒
Detailed specifications: IRL3502, IRL3502S, IRL3705N, IRL3705NL, IRL3705NS, IRL3803, IRL3803L, IRL3803S, AON6380, IRL510A, IRL511, IRL520, IRL520A, IRL520N, IRL520NL, IRL520NS, IRL521
Keywords - IRL510 MOSFET specs
IRL510 cross reference
IRL510 equivalent finder
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IRL510 substitution
IRL510 replacement
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