IRL510 datasheet, подбор замены

 ..1. Size:227K  international rectifier
 irl510pbf.pdf 

PD - 95406 IRL510PbF Lead-Free 6/17/04 Document Number 91297 www.vishay.com 1 IRL510PbF Document Number 91297 www.vishay.com 2 IRL510PbF Document Number 91297 www.vishay.com 3 IRL510PbF Document Number 91297 www.vishay.com 4 IRL510PbF Document Number 91297 www.vishay.com 5 IRL510PbF Document Number 91297 www.vishay.com 6 IRL510PbF TO-220AB Package Outline

 ..2. Size:169K  international rectifier
 irl510.pdf 

 ..3. Size:1077K  vishay
 irl510pbf sihl510.pdf 

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si

 ..4. Size:1074K  vishay
 irl510 sihl510.pdf 

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si

 0.1. Size:163K  international rectifier
 irl510s.pdf 

Document Number 90380 www.vishay.com 1313 Document Number 90380 www.vishay.com 1314 Document Number 90380 www.vishay.com 1315 Document Number 90380 www.vishay.com 1316 Document Number 90380 www.vishay.com 1317 Document Number 90380 www.vishay.com 1318 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

 0.2. Size:242K  fairchild semi
 irl510a.pdf 

IRL510A FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxi

 0.3. Size:885K  samsung
 irl510a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

 0.4. Size:272K  vishay
 irl510s sihl510s.pdf 

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4

 0.5. Size:297K  vishay
 irl510spbf sihl510s.pdf 

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4