IRF7493PBF-1 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7493PBF-1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SO-8
IRF7493PBF-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7493PBF-1 Datasheet (PDF)
irf7493pbf-1.pdf
IRF7493PbF-1HEXFET Power MOSFETVDS 80 VAA1 8S DRDS(on) max 15 m2 7(@V = 10V)GS S DQg (typical) 35 nC3 6S DID 4 59.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmenta
irf7493pbf.pdf
PD - 95289IRF7493PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High frequency DC-DC convertersl Lead-Free 15m @VGS=10V80V 35nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Av
irf7493pbf.pdf
PD - 95289IRF7493PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High frequency DC-DC convertersl Lead-Free 15m @VGS=10V80V 35nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Av
irf7493.pdf
PD - 94654PROVISIONALIRF7493HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters80V 15m @VGS = 10V 9.2ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avalanch
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AFN5800W
History: AFN5800W
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918