SIHF610S Datasheet. Specs and Replacement

Type Designator: SIHF610S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-263

SIHF610S substitution

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SIHF610S datasheet

 ..1. Size:175K  vishay
 irf610s sihf610s irf610l sihf610l.pdf pdf_icon

SIHF610S

IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 200 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 8.2 Repetitive avalanche rated Qgs (nC) 1.8 Fast switching Available Qgd (nC) 4.5 Ease of paralleling Configuration Sing... See More ⇒

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SIHF610S

IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Simple Drive R... See More ⇒

 7.1. Size:202K  vishay
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SIHF610S

IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

 7.2. Size:202K  vishay
 sihf610.pdf pdf_icon

SIHF610S

IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

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Detailed specifications: SIHF520S, SIHF530, SIHF530S, SIHF540, SIHF540S, SIHF5N50D, SIHF610, SIHF610L, 7N65, SIHF614, SIHF614S, SIHF620, SIHF620S, SIHF624, SIHF624S, SIHF630, SIHF630S

Keywords - SIHF610S MOSFET specs

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