SIHF640L
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHF640L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 430
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO-262
SIHF640L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHF640L
Datasheet (PDF)
..1. Size:196K vishay
irf640lpbf irf640spbf sihf640l sihf640s.pdf 
IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi
..2. Size:209K vishay
irf640s sihf640s sihf640l.pdf
IRF640S, SiHF640S, SiHF640Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.18 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperature AvailableQgd (nC) 39 Fast switchingConfiguration Single
7.1. Size:197K vishay
irf640pbf sihf640.pdf
IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC
7.2. Size:196K vishay
irf640 sihf640.pdf
IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC
8.1. Size:202K vishay
irf644 sihf644.pdf
IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
8.2. Size:167K vishay
irf644s sihf644s.pdf
IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing
8.3. Size:202K vishay
irf644pbf sihf644.pdf
IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
8.4. Size:193K vishay
irf644spbf sihf644s.pdf
IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing
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