SIHF730AS MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHF730AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 103 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-263
SIHF730AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHF730AS Datasheet (PDF)
irf730alpbf irf730aspbf sihf730al sihf730as.pdf
IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz
irf730apbf sihf730a.pdf
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
irf730a sihf730a.pdf
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
irf730s sihf730s.pdf
IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing
sihf730.pdf
IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf730spbf sihf730s.pdf
IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing
irf730 sihf730.pdf
IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf730 sihf730.pdf
IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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