IRL521 Datasheet. Specs and Replacement
Type Designator: IRL521 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Id| ⓘ - Maximum Drain Current: 7.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
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IRL521 datasheet
9.1. Size:401K international rectifier
irl520nspbf irl520nlpbf.pdf 
PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Cur... See More ⇒
9.2. Size:163K international rectifier
irl520s.pdf
Document Number 90382 www.vishay.com 1325 Document Number 90382 www.vishay.com 1326 Document Number 90382 www.vishay.com 1327 Document Number 90382 www.vishay.com 1328 Document Number 90382 www.vishay.com 1329 Document Number 90382 www.vishay.com 1330 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as ... See More ⇒
9.4. Size:401K international rectifier
irl520nlpbf irl520nspbf.pdf
PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Cur... See More ⇒
9.5. Size:252K international rectifier
irl520pbf.pdf
PD - 95450 IRL520PbF Lead-Free 6/22/04 Document Number 91298 www.vishay.com 1 IRL520PbF Document Number 91298 www.vishay.com 2 IRL520PbF Document Number 91298 www.vishay.com 3 IRL520PbF Document Number 91298 www.vishay.com 4 IRL520PbF Document Number 91298 www.vishay.com 5 IRL520PbF Document Number 91298 www.vishay.com 6 IRL520PbF + Circuit Layout Consider... See More ⇒
9.6. Size:134K international rectifier
irl520n.pdf
PD - 91494A IRL520N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.18 Fast Switching G Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒
9.7. Size:308K international rectifier
irl520npbf.pdf
PD- 95668 IRL520NPbF Lead-Free www.irf.com 1 8/2/04 IRL520NPbF 2 www.irf.com IRL520NPbF www.irf.com 3 IRL520NPbF 4 www.irf.com IRL520NPbF www.irf.com 5 IRL520NPbF 6 www.irf.com IRL520NPbF www.irf.com 7 IRL520NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139)... See More ⇒
9.8. Size:186K international rectifier
irl520ns irl520nl.pdf
PD - 91534 IRL520NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 100V Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175 C Operating Temperature RDS(on) = 0.18 Fast Switching G Fully Avalanche Rated ID = 10A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... See More ⇒
9.10. Size:889K samsung
irl520a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating... See More ⇒
9.11. Size:327K vishay
irl520l sihl520l.pdf
IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin... See More ⇒
9.12. Size:1082K vishay
irl520 sihl520.pdf
IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si... See More ⇒
9.13. Size:1084K vishay
irl520pbf sihl520.pdf
IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si... See More ⇒
9.14. Size:237K vishay
irl520lpbf sihl520l.pdf
IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin... See More ⇒
9.15. Size:1424K cn vbsemi
irl520np.pdf
IRL520NP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAX... See More ⇒
9.16. Size:254K inchange semiconductor
irl520n.pdf
isc N-Channel MOSFET Transistor IRL520N,IIRL520N FEATURES Low drain-source on-resistance RDS(on) 180m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
9.17. Size:255K inchange semiconductor
irl520nl.pdf
Isc N-Channel MOSFET Transistor IRL520NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100... See More ⇒
9.18. Size:257K inchange semiconductor
irl520ns.pdf
Isc N-Channel MOSFET Transistor IRL520NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒
Detailed specifications: IRL510, IRL510A, IRL511, IRL520, IRL520A, IRL520N, IRL520NL, IRL520NS, 5N60, IRL530, IRL530A, IRL530N, IRL530NL, IRL530NS, IRL531, IRL540, IRL540A
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