All MOSFET. SIHF830L Datasheet

 

SIHF830L Datasheet and Replacement


   Type Designator: SIHF830L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-262
 

 SIHF830L substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIHF830L Datasheet (PDF)

 ..1. Size:174K  vishay
 irf830lpbf irf830spbf sihf830l.pdf pdf_icon

SIHF830L

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

 ..2. Size:234K  vishay
 irf830s sihf830s irf830l sihf830l.pdf pdf_icon

SIHF830L

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg max. (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

 7.1. Size:207K  vishay
 irf830alpbf irf830aspbf sihf830al sihf830as.pdf pdf_icon

SIHF830L

IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize

 7.2. Size:1091K  vishay
 irf830a sihf830a.pdf pdf_icon

SIHF830L

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

SHOW MORE

Datasheet: SIHF820AL , SIHF820AS , SIHF820L , SIHF820S , SIHF830 , SIHF830A , SIHF830AL , SIHF830AS , IRF520 , SIHF830S , SIHF840 , SIHF840A , SIHF840AL , SIHF840AS , SIHF840L , SIHF840LC , SIHF840LCL .

History: SIHF820L | SIHF830A | SIHF830

Keywords - SIHF830L MOSFET datasheet

 SIHF830L cross reference
 SIHF830L equivalent finder
 SIHF830L lookup
 SIHF830L substitution
 SIHF830L replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.