All MOSFET. SIHF840AL Datasheet

 

SIHF840AL Datasheet and Replacement


   Type Designator: SIHF840AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-262
 

 SIHF840AL substitution

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SIHF840AL Datasheet (PDF)

 ..1. Size:206K  vishay
irf840as sihf840as irf840al sihf840al.pdf pdf_icon

SIHF840AL

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

 ..2. Size:199K  vishay
irf840alpbf irf840aspbf sihf840al sihf840as.pdf pdf_icon

SIHF840AL

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

 6.1. Size:207K  vishay
sihf840a.pdf pdf_icon

SIHF840AL

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

 6.2. Size:206K  vishay
irf840a sihf840a.pdf pdf_icon

SIHF840AL

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

Datasheet: SIHF830 , SIHF830A , SIHF830AL , SIHF830AS , SIHF830L , SIHF830S , SIHF840 , SIHF840A , IRF830 , SIHF840AS , SIHF840L , SIHF840LC , SIHF840LCL , SIHF840LCS , SIHF840S , SIHF8N50D , SIHF8N50L .

History: AOC2804B | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E

Keywords - SIHF840AL MOSFET datasheet

 SIHF840AL cross reference
 SIHF840AL equivalent finder
 SIHF840AL lookup
 SIHF840AL substitution
 SIHF840AL replacement

 

 
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