IRL530A PDF and Equivalents Search

 

IRL530A Specs and Replacement

Type Designator: IRL530A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO220

IRL530A substitution

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IRL530A datasheet

 ..1. Size:163K  1
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IRL530A

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 ..2. Size:1028K  samsung
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IRL530A

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings... See More ⇒

 8.1. Size:172K  international rectifier
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IRL530A

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 8.2. Size:167K  international rectifier
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IRL530A

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Detailed specifications: IRL511, IRL520, IRL520A, IRL520N, IRL520NL, IRL520NS, IRL521, IRL530, 4N60, IRL530N, IRL530NL, IRL530NS, IRL531, IRL540, IRL540A, IRL540N, IRL540NL

Keywords - IRL530A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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