IRL530A - параметры транзистора MOSFET, его аналоги, datasheet

IRL530A Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRL530A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 62 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 16.9 nC
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO220

Аналог (замена) для IRL530A

- подбор ⓘ MOSFET транзистора по параметрам

IRL530A Datasheet (PDF)

..1. Size:163K 1
irl530a.pdf pdf_icon

..2. Size:1028K samsung
irl530a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

8.1. Size:172K international rectifier
irl530s.pdf pdf_icon

8.2. Size:167K international rectifier
irl530.pdf pdf_icon

8.3. Size:127K international rectifier
irl530n.pdf pdf_icon

PD - 91348BIRL530NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

8.4. Size:178K international rectifier
irl530ns irl530nl.pdf pdf_icon

PD - 91349BIRL530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175C Operating TemperatureRDS(on) = 0.10G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

8.5. Size:460K international rectifier
irl530nspbf irl530nlpbf.pdf pdf_icon

PD- 95593IRL530NSPbFIRL530NLPbF Lead-Freewww.irf.com 107/21/04IRL530NS/LPbF2 www.irf.comIRL530NS/LPbFwww.irf.com 3IRL530NS/LPbF4 www.irf.comIRL530NS/LPbFwww.irf.com 5IRL530NS/LPbF6 www.irf.comIRL530NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

8.6. Size:249K international rectifier
irl530pbf.pdf pdf_icon

PD - 95452IRL530PbF Lead-Free6/23/04Document Number: 91299 www.vishay.com1IRL530PbFDocument Number: 91299 www.vishay.com2IRL530PbFDocument Number: 91299 www.vishay.com3IRL530PbFDocument Number: 91299 www.vishay.com4IRL530PbFDocument Number: 91299 www.vishay.com5IRL530PbFDocument Number: 91299 www.vishay.com6IRL530PbF+Circuit Layout Consider

8.7. Size:581K international rectifier
irl530npbf.pdf pdf_icon

PD - 95451IRL530NPbF Lead-Freewww.irf.com 16/23/04IRL530NPbF2 www.irf.comIRL530NPbFwww.irf.com 3IRL530NPbF4 www.irf.comIRL530NPbFwww.irf.com 5IRL530NPbF6 www.irf.comIRL530NPbFwww.irf.com 7IRL530NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

8.8. Size:996K vishay
irl530 sihl530.pdf pdf_icon

IRL530, SiHL530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.16RoHS* Logic-Level Gate DriveQg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 14 Fast SwitchingConfiguration Singl

8.9. Size:998K vishay
irl530pbf.pdf pdf_icon

8.10. Size:301K vishay
irl530s sihl530s.pdf pdf_icon

IRL530S, SiHL530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5.0 V 0.16 Available in Tape and ReelQg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.8 Logic Level Gate DriveQgd (nC) 14 RDS(on) Specified at VGS = 4 V

8.11. Size:275K vishay
irl530s sihl530s.pdf pdf_icon

8.12. Size:244K inchange semiconductor
irl530n.pdf pdf_icon

isc N-Channel MOSFET Transistor IRL530NIIRL530NFEATURESStatic drain-source on-resistance:RDS(on) 0.1Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONReliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.13. Size:258K inchange semiconductor
irl530ns.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRL530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

8.14. Size:256K inchange semiconductor
irl530nl.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRL530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Другие MOSFET... IRL511 , IRL520 , IRL520A , IRL520N , IRL520NL , IRL520NS , IRL521 , IRL530 , 10N65 , IRL530N , IRL530NL , IRL530NS , IRL531 , IRL540 , IRL540A , IRL540N , IRL540NL .