SIHF9Z10 Datasheet. Specs and Replacement

Type Designator: SIHF9Z10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220AB

SIHF9Z10 substitution

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SIHF9Z10 datasheet

 ..1. Size:132K  vishay
 irf9z10 sihf9z10.pdf pdf_icon

SIHF9Z10

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi... See More ⇒

 ..2. Size:133K  vishay
 sihf9z10.pdf pdf_icon

SIHF9Z10

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi... See More ⇒

 7.1. Size:194K  vishay
 irf9z14spbf sihf9z14l sihf9z14s.pdf pdf_icon

SIHF9Z10

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8 ... See More ⇒

 7.2. Size:127K  vishay
 irf9z14 sihf9z14.pdf pdf_icon

SIHF9Z10

IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 12 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requir... See More ⇒

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Detailed specifications: SIHF9610S, SIHF9620, SIHF9620S, SIHF9630, SIHF9630S, SIHF9640, SIHF9640L, SIHF9640S, IRFZ44N, SIHF9Z14, SIHF9Z14L, SIHF9Z14S, SIHF9Z20, SIHF9Z22, SIHF9Z24, SIHF9Z24L, SIHF9Z24S

Keywords - SIHF9Z10 MOSFET specs

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