SIHF9Z22
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHF9Z22
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 57
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33
Ohm
Package:
TO-220
SIHF9Z22
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHF9Z22
Datasheet (PDF)
..1. Size:1161K vishay
sihf9z22.pdf 
IRF9Z22, SiHF9Z22Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.33RoHS* Fast Switching Qg (Max.) (nC) 26 COMPLIANT Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature StabilityConfiguration SingleDESCRIPTIONS
7.1. Size:196K vishay
irf9z24 sihf9z24.pdf
IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require
7.2. Size:197K vishay
irf9z24pbf sihf9z24.pdf
IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require
7.3. Size:1215K vishay
irf9z20pbf sihf9z20.pdf
IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/
7.4. Size:167K vishay
irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4
7.5. Size:1213K vishay
irf9z20 sihf9z20.pdf
IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/
7.6. Size:193K vishay
irf9z24spbf sihf9z24l sihf9z24s.pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4
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