All MOSFET. SIHFBC30L Datasheet

 

SIHFBC30L Datasheet and Replacement


   Type Designator: SIHFBC30L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-262
 

 SIHFBC30L substitution

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SIHFBC30L Datasheet (PDF)

 ..1. Size:290K  vishay
 sihfbc30l sihfbc30s.pdf pdf_icon

SIHFBC30L

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

 ..2. Size:264K  vishay
 irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf pdf_icon

SIHFBC30L

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

 6.1. Size:1805K  vishay
 irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30L

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 6.2. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf pdf_icon

SIHFBC30L

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

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Datasheet: SIHFB9N65A , SIHFBC20 , SIHFBC20L , SIHFBC20S , SIHFBC30 , SIHFBC30A , SIHFBC30AL , SIHFBC30AS , 2SK3878 , SIHFBC30S , SIHFBC40 , SIHFBC40A , SIHFBC40AS , SIHFBC40L , SIHFBC40LC , SIHFBC40S , SIHFBE20 .

History: AM2305P | RSJ300N10 | IRF5M3415 | UTT6NP10G-S08-R | SIA537EDJ | AON6278 | QM2N7002E3K1

Keywords - SIHFBC30L MOSFET datasheet

 SIHFBC30L cross reference
 SIHFBC30L equivalent finder
 SIHFBC30L lookup
 SIHFBC30L substitution
 SIHFBC30L replacement

 

 
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