SIHFBC30L datasheet, аналоги, основные параметры

Наименование производителя: SIHFBC30L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 74 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 86 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm

Тип корпуса: TO-262

Аналог (замена) для SIHFBC30L

- подборⓘ MOSFET транзистора по параметрам

 

SIHFBC30L даташит

 ..1. Size:290K  vishay
sihfbc30l sihfbc30s.pdfpdf_icon

SIHFBC30L

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 ..2. Size:264K  vishay
irfbc30s sihfbc30s irfbc30l sihfbc30l.pdfpdf_icon

SIHFBC30L

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 6.1. Size:1805K  vishay
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SIHFBC30L

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 6.2. Size:216K  vishay
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SIHFBC30L

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

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