SIHFBE20
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHFBE20
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 54
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5
Ohm
Package:
TO-220AB
SIHFBE20
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHFBE20
Datasheet (PDF)
..1. Size:1072K vishay
irfbe20pbf sihfbe20.pdf 
IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
..2. Size:1069K vishay
irfbe20 sihfbe20.pdf
IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
8.1. Size:448K vishay
irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem
8.2. Size:1517K vishay
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
8.3. Size:473K vishay
sihfbe30l sihfbe30s.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem
8.4. Size:1520K vishay
sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
8.5. Size:1469K infineon
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
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