SIHFBG20 Datasheet. Specs and Replacement

Type Designator: SIHFBG20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: TO-220AB

SIHFBG20 substitution

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SIHFBG20 datasheet

 ..1. Size:1174K  vishay
irfbg20pbf sihfbg20.pdf pdf_icon

SIHFBG20

IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D ... See More ⇒

 ..2. Size:1123K  infineon
irfbg20 sihfbg20.pdf pdf_icon

SIHFBG20

IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D ... See More ⇒

 8.1. Size:835K  vishay
irfbg30pbf sihfbg30.pdf pdf_icon

SIHFBG20

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

 8.2. Size:1563K  vishay
irfbg30 sihfbg30.pdf pdf_icon

SIHFBG20

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒

Detailed specifications: SIHFBE30, SIHFBE30L, SIHFBE30S, SIHFBF20, SIHFBF20L, SIHFBF20S, SIHFBF30, SIHFBF30S, SKD502T, SIHFBG30, SIHFD014, SIHFD020, SIHFD024, SIHFD110, SIHFD113, SIHFD120, SIHFD210

Keywords - SIHFBG20 MOSFET specs

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