SIHFBG20 datasheet, подбор замены

 ..1. Size:1174K  vishay
 irfbg20pbf sihfbg20.pdf 

IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D

 ..2. Size:1123K  infineon
 irfbg20 sihfbg20.pdf 

IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D

 8.1. Size:835K  vishay
 irfbg30pbf sihfbg30.pdf 

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 8.2. Size:1563K  vishay
 irfbg30 sihfbg30.pdf 

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.1. Size:1805K  vishay
 irfbc30 sihfbc30.pdf 

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 9.2. Size:223K  vishay
 sihfb9n65a.pdf 

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu

 9.3. Size:264K  vishay
 irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf 

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) ( )VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt

 9.4. Size:361K  vishay
 irfbc40as sihfbc40as.pdf 

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche

 9.5. Size:291K  vishay
 sihfbc20l sihfbc20s.pdf 

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S) RDS(on) ( )VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S) Qg (Max.) (nC) 18 Dynamic dV/dt Rating Qgs

 9.6. Size:1072K  vishay
 irfbe20pbf sihfbe20.pdf 

IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 6.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.7. Size:212K  vishay
 sihfb9n60a.pdf 

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config

 9.8. Size:209K  vishay
 irfbc40lc sihfbc40lc.pdf 

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Conf

 9.9. Size:1055K  vishay
 irfbf20pbf sihfbf20.pdf 

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.10. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf 

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

 9.11. Size:387K  vishay
 irfbc40aspbf sihfbc40as.pdf 

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche

 9.12. Size:1069K  vishay
 irfbe20 sihfbe20.pdf 

IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 6.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.13. Size:1571K  vishay
 irfbc20pbf sihfbc20.pdf 

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.14. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf 

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co

 9.15. Size:1073K  vishay
 irfbf30pbf sihfbf30.pdf 

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.16. Size:201K  vishay
 irfb13n50a sihfb13n50a.pdf 

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 9.17. Size:448K  vishay
 irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf 

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem

 9.18. Size:1614K  vishay
 irfbc40 sihfbc40.pdf 

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.19. Size:270K  vishay
 irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf 

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

 9.20. Size:1517K  vishay
 irfbe30 sihfbe30.pdf 

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.21. Size:261K  vishay
 irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf 

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca

 9.22. Size:1070K  vishay
 irfbf30 sihfbf30.pdf 

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.23. Size:473K  vishay
 sihfbe30l sihfbe30s.pdf 

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem

 9.24. Size:201K  vishay
 irfb13n50a irfb13n50apbf sihfb13n50a.pdf 

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 9.25. Size:1617K  vishay
 irfbc40pbf sihfbc40.pdf 

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.26. Size:296K  vishay
 irfbf20spbf sihfbf20l sihfbf20s.pdf 

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

 9.27. Size:290K  vishay
 irfbc40spbf sihfbc40l sihfbc40s.pdf 

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) ( )VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt

 9.28. Size:266K  vishay
 irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf 

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S) RDS(on) ( )VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S) Qg (Max.) (nC) 18 Dynamic dV/dt Rating Qgs

 9.29. Size:208K  vishay
 irfbc40a sihfbc40a.pdf 

IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 42 COMPLIANT Ruggedness Qgs (nC) 10 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configurati

 9.30. Size:290K  vishay
 sihfbc30l sihfbc30s.pdf 

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 9.31. Size:1808K  vishay
 irfbc30pbf sihfbc30.pdf 

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 9.32. Size:1568K  vishay
 irfbc20 sihfbc20.pdf 

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.33. Size:137K  vishay
 irfb11n50a sihfb11n50a.pdf 

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi

 9.34. Size:264K  vishay
 irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf 

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 9.35. Size:223K  vishay
 irfb9n65a sihfb9n65a.pdf 

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu

 9.36. Size:209K  vishay
 sihfbc40a.pdf 

IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 42 COMPLIANT Ruggedness Qgs (nC) 10 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configurati

 9.37. Size:1520K  vishay
 sihfbe30.pdf 

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.38. Size:858K  vishay
 irfb20n50k sihfb20n50k.pdf 

IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.21 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 110 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Conf

 9.39. Size:223K  vishay
 irfb18n50k sihfb18n50k.pdf 

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con

 9.40. Size:264K  vishay
 sihfbf30s.pdf 

IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 900 Definition RDS(on) ( )VGS = 10 V 3.7 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 10 Fast Switching Qgd (nC) 42 Ease of Paralleling Simple Drive Requirements Configuration Single Compliant to R

 9.41. Size:211K  vishay
 irfb9n60a sihfb9n60a.pdf 

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config

 9.42. Size:210K  vishay
 irfb17n50l sihfb17n50l.pdf 

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co

 9.43. Size:1053K  vishay
 irfbf20 sihfbf20.pdf 

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.44. Size:215K  vishay
 irfbc30a sihfbc30a.pdf 

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

 9.45. Size:285K  vishay
 sihfbc30al sihfbc30as.pdf 

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca

 9.46. Size:210K  vishay
 irfbc40lc irfbc40lcpbf sihfbc40lc.pdf 

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Conf

 9.47. Size:1757K  infineon
 irfbc30 sihfbc30.pdf 

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 9.48. Size:156K  infineon
 irfb13n50a sihfb13n50a.pdf 

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Available Reqirements RDS(on) ( )VGS = 10 V 0.450 RoHS* Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qgs (nC) 20 Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration

 9.49. Size:1566K  infineon
 irfbc40 sihfbc40.pdf 

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.50. Size:1469K  infineon
 irfbe30 sihfbe30.pdf 

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.51. Size:1520K  infineon
 irfbc20 sihfbc20.pdf 

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D