SIHFI510G Datasheet. Specs and Replacement

Type Designator: SIHFI510G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO-220FP

SIHFI510G substitution

- MOSFET ⓘ Cross-Reference Search

 

SIHFI510G datasheet

 ..1. Size:1038K  vishay
 irfi510g irfi510gpbf sihfi510g.pdf pdf_icon

SIHFI510G

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒

 ..2. Size:1040K  vishay
 irfi510g sihfi510g.pdf pdf_icon

SIHFI510G

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒

 8.1. Size:1473K  vishay
 irfi540g sihfi540g.pdf pdf_icon

SIHFI510G

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low T... See More ⇒

 8.2. Size:932K  vishay
 irfi530g irfi530gpbf sihfi530g.pdf pdf_icon

SIHFI510G

IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 0.16 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 175 C Operating Temperature Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low T... See More ⇒

SHOW MORE

Detailed specifications: SIHFD9010, SIHFD9014, SIHFD9024, SIHFD9110, SIHFD9120, SIHFD9210, SIHFD9220, SIHFDC20, 5N60, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, SIHFI620G, SIHFI630G, SIHFI634G, SIHFI640G

Keywords - SIHFI510G MOSFET specs

 SIHFI510G cross reference

 SIHFI510G equivalent finder

 SIHFI510G pdf lookup

 SIHFI510G substitution

 SIHFI510G replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.