SIHFI620G Datasheet. Specs and Replacement

Type Designator: SIHFI620G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220FP

SIHFI620G substitution

- MOSFET ⓘ Cross-Reference Search

 

SIHFI620G datasheet

 ..1. Size:1751K  vishay
irfi620g sihfi620g.pdf pdf_icon

SIHFI620G

IRFI620G, SiHFI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.80 f = 60 Hz) RoHS* Qg (Max.) (nC) 14 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 7.9 Low Thermal Resistance Configuration S... See More ⇒

 ..2. Size:1753K  vishay
sihfi620g.pdf pdf_icon

SIHFI620G

IRFI620G, SiHFI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.80 f = 60 Hz) RoHS* Qg (Max.) (nC) 14 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 7.9 Low Thermal Resistance Configuration S... See More ⇒

 8.1. Size:1398K  vishay
irfi644g sihfi644g.pdf pdf_icon

SIHFI620G

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si... See More ⇒

 8.2. Size:1541K  vishay
irfi630g sihfi630g.pdf pdf_icon

SIHFI620G

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S... See More ⇒

Detailed specifications: SIHFD9210, SIHFD9220, SIHFDC20, SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, 20N50, SIHFI630G, SIHFI634G, SIHFI640G, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G, SIHFI740GLC

Keywords - SIHFI620G MOSFET specs

 SIHFI620G cross reference

 SIHFI620G equivalent finder

 SIHFI620G pdf lookup

 SIHFI620G substitution

 SIHFI620G replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs