Справочник MOSFET. SIHFI620G

 

SIHFI620G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFI620G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHFI620G

 

 

SIHFI620G Datasheet (PDF)

 ..1. Size:1751K  vishay
 irfi620g sihfi620g.pdf

SIHFI620G SIHFI620G

IRFI620G, SiHFI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.80f = 60 Hz) RoHS*Qg (Max.) (nC) 14COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 7.9 Low Thermal ResistanceConfiguration S

 ..2. Size:1753K  vishay
 sihfi620g.pdf

SIHFI620G SIHFI620G

IRFI620G, SiHFI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.80f = 60 Hz) RoHS*Qg (Max.) (nC) 14COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 7.9 Low Thermal ResistanceConfiguration S

 8.1. Size:1398K  vishay
 irfi644g sihfi644g.pdf

SIHFI620G SIHFI620G

IRFI644G, SiHFI644GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.28f = 60 Hz)RoHS*Qg (Max.) (nC) 68COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 35 Low Thermal ResistanceConfiguration Si

 8.2. Size:1541K  vishay
 irfi630g sihfi630g.pdf

SIHFI620G SIHFI620G

IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S

 8.3. Size:954K  vishay
 sihfi614g.pdf

SIHFI620G SIHFI620G

IRFI614G, SiHFI614GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.0f = 60 Hz)RoHS*Qg (Max.) (nC) 8.2COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Low Thermal ResistanceConfiguration

 8.4. Size:1399K  vishay
 sihfi644g.pdf

SIHFI620G SIHFI620G

IRFI644G, SiHFI644GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.28f = 60 Hz)RoHS*Qg (Max.) (nC) 68COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 35 Low Thermal ResistanceConfiguration Si

 8.5. Size:953K  vishay
 irfi614g sihfi614g.pdf

SIHFI620G SIHFI620G

IRFI614G, SiHFI614GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.0f = 60 Hz)RoHS*Qg (Max.) (nC) 8.2COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Low Thermal ResistanceConfiguration

 8.6. Size:1801K  vishay
 sihfi640g.pdf

SIHFI620G SIHFI620G

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

 8.7. Size:1799K  vishay
 irfi640g sihfi640g.pdf

SIHFI620G SIHFI620G

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

 8.8. Size:1107K  vishay
 sihfi634g.pdf

SIHFI620G SIHFI620G

IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre

 8.9. Size:1543K  vishay
 sihfi630g.pdf

SIHFI620G SIHFI620G

IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S

 8.10. Size:1106K  vishay
 irfi634g sihfi634g.pdf

SIHFI620G SIHFI620G

IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SI7135DP

 

 
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