All MOSFET. SIHFI9634G Datasheet

 

SIHFI9634G Datasheet and Replacement


   Type Designator: SIHFI9634G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220FP
 

 SIHFI9634G substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIHFI9634G Datasheet (PDF)

 ..1. Size:832K  vishay
 irfi9634gpbf sihfi9634g.pdf pdf_icon

SIHFI9634G

IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION

 ..2. Size:831K  vishay
 irfi9634g sihfi9634g.pdf pdf_icon

SIHFI9634G

IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION

 6.1. Size:1550K  vishay
 irfi9630gpbf sihfi9630g.pdf pdf_icon

SIHFI9634G

IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist

 6.2. Size:1549K  vishay
 irfi9630g sihfi9630g.pdf pdf_icon

SIHFI9634G

IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist

SHOW MORE

Datasheet: SIHFI840G , SIHFI840GLC , SIHFI9520G , SIHFI9530G , SIHFI9540G , SIHFI9610G , SIHFI9620G , SIHFI9630G , IRFB7545 , SIHFI9640G , SIHFI9Z14G , SIHFI9Z24G , SIHFI9Z34G , SIHFIB5N65A , SIHFIB6N60A , SIHFIB7N50A , SIHFIBC20G .

History: SIA850DJ

Keywords - SIHFI9634G MOSFET datasheet

 SIHFI9634G cross reference
 SIHFI9634G equivalent finder
 SIHFI9634G lookup
 SIHFI9634G substitution
 SIHFI9634G replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.