All MOSFET. SIHFIBC40GLC Datasheet

 

SIHFIBC40GLC Datasheet and Replacement


   Type Designator: SIHFIBC40GLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220FP
 

 SIHFIBC40GLC substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIHFIBC40GLC Datasheet (PDF)

 ..1. Size:1603K  vishay
 sihfibc40glc.pdf pdf_icon

SIHFIBC40GLC

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

 ..2. Size:1601K  vishay
 irfibc40glc sihfibc40glc.pdf pdf_icon

SIHFIBC40GLC

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

 4.1. Size:1443K  vishay
 sihfibc40g.pdf pdf_icon

SIHFIBC40GLC

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

 4.2. Size:1441K  vishay
 irfibc40g sihfibc40g.pdf pdf_icon

SIHFIBC40GLC

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

SHOW MORE

Datasheet: SIHFI9Z24G , SIHFI9Z34G , SIHFIB5N65A , SIHFIB6N60A , SIHFIB7N50A , SIHFIBC20G , SIHFIBC30G , SIHFIBC40G , BS170 , SIHFIBE20G , SIHFIBE30G , SIHFIBF20G , SIHFIBF30G , SIHFIZ14G , SIHFIZ24G , SIHFIZ34G , SIHFIZ44G .

History: SIHD4N80E | MMBFJ175 | IPC100N04S5L-2R6 | AO3456

Keywords - SIHFIBC40GLC MOSFET datasheet

 SIHFIBC40GLC cross reference
 SIHFIBC40GLC equivalent finder
 SIHFIBC40GLC lookup
 SIHFIBC40GLC substitution
 SIHFIBC40GLC replacement

 

 
Back to Top

 


 
.