SIHFP064 MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHFP064
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 190 nC
trⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 3200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-247AC
SIHFP064 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHFP064 Datasheet (PDF)
irfp064 sihfp064.pdf
IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi
sihfp064.pdf
IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi
irfp048 sihfp048.pdf
IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConfi
sihfp048r.pdf
IRFP048R, SiHFP048RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECCon
irfp048pbf sihfp048.pdf
IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConf
irfp054pbf sihfp054.pdf
IRFP054, SiHFP054Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.014RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 160 Fast SwitchingQgs (nC) 48 Ease of ParallelingQgd (nC) 54 Simple Drive RequirementsConfiguration Single Com
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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