All MOSFET. IRL610A Datasheet

 

IRL610A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.1 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220

 IRL610A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL610A Datasheet (PDF)

 ..1. Size:900K  samsung
 irl610a.pdf

IRL610A IRL610A

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 3.3 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 8.1. Size:186K  1
 irl610.pdf

IRL610A IRL610A

 9.1. Size:18K  samsung
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IRL610A

Datasheet: IRL540 , IRL540A , IRL540N , IRL540NL , IRL540NS , IRL541 , IRL5602S , IRL610 , 2N60 , IRL611 , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 , IRL630A , IRL630S .

 

 
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