IRF7606PBF Datasheet and Replacement
Type Designator: IRF7606PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICRO8
IRF7606PBF substitution
IRF7606PBF Datasheet (PDF)
irf7606pbf.pdf

PD - 95245IRF7606PbFHEXFET Power MOSFETl Generation V TechnologyA1 8l Ultra Low On-ResistanceS Dl P-Channel MOSFET2 7 VDSS = -30VS Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7606.pdf

PD - 9.1264CIRF7606HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFET2 7 VDSS = -30VS D Very Small SOIC Package3 6S D Low Profile (
irf7603pbf.pdf

PD- 95347IRF7603PbF Lead-Freewww.irf.com 102/22/05IRF7603PbF2 www.irf.comIRF7603PbFwww.irf.com 3IRF7603PbF4 www.irf.comIRF7603PbFwww.irf.com 5IRF7603PbF6 www.irf.comIRF7603PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7601.pdf

PD - 9.1261DIRF7601HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6 Low Profile (
Datasheet: SIHFP054 , SIHFP064 , SIHFP140 , SIHFP150 , SIHFP17N50L , SIHFP21N60L , SIHFP22N50A , SIHFP22N60K , AON7408 , IRF7607PBF , IRF7663PBF , IRF7665S2TR1PBF , IRF7665S2TRPBF , IRF7704GPBF , IRF7704PBF , IRF7705GPBF , IRF7705PBF .
History: IXFP05N100M | AFN3458 | BLP10N20J-P | APT5032CVR | AFN3458BW | SIHFI730G | CS2N65A3
Keywords - IRF7606PBF MOSFET datasheet
IRF7606PBF cross reference
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IRF7606PBF lookup
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IRF7606PBF replacement
History: IXFP05N100M | AFN3458 | BLP10N20J-P | APT5032CVR | AFN3458BW | SIHFI730G | CS2N65A3



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