All MOSFET. IRF7606PBF Datasheet

 

IRF7606PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF7606PBF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: Micro8

IRF7606PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7606PBF Datasheet (PDF)

1.1. irf7606pbf.pdf Size:183K _upd-mosfet

IRF7606PBF
IRF7606PBF

PD - 95245 IRF7606PbF HEXFET® Power MOSFET l Generation V Technology A 1 8 l Ultra Low On-Resistance S D l P-Channel MOSFET 2 7 VDSS = -30V S D l Very Small SOIC Package 3 6 S D l Low Profile (<1.1mm) 4 l Available in Tape & Reel 5 G D RDS(on) = 0.09Ω l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc

3.1. irf7606.pdf Size:102K _international_rectifier

IRF7606PBF
IRF7606PBF

PD - 9.1264C IRF7606 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel MOSFET 2 7 VDSS = -30V S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 5 Available in Tape & Reel G D RDS(on) = 0.09? Fast Switching T op View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t

 4.1. irf7603pbf.pdf Size:1300K _upd-mosfet

IRF7606PBF
IRF7606PBF

PD- 95347 IRF7603PbF • Lead-Free www.irf.com 1 02/22/05 IRF7603PbF 2 www.irf.com IRF7603PbF www.irf.com 3 IRF7603PbF 4 www.irf.com IRF7603PbF www.irf.com 5 IRF7603PbF 6 www.irf.com IRF7603PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS D DIM MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91

4.2. irf7601pbf.pdf Size:208K _upd-mosfet

IRF7606PBF
IRF7606PBF

PD - 95244 IRF7601PbF • Lead-Free www.irf.com 1 5/13/04 IRF7601PbF 2 www.irf.com IRF7601PbF www.irf.com 3 IRF7601PbF 4 www.irf.com IRF7601PbF www.irf.com 5 IRF7601PbF 6 www.irf.com IRF7601PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS D DIM MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91

 4.3. irf7607pbf.pdf Size:144K _upd-mosfet

IRF7606PBF
IRF7606PBF

PD - 95698 IRF7607PbF HEXFET® Power MOSFET l Trench Technology A A 1 8 l Ultra Low On-Resistance S D VDSS = 20V l N-Channel MOSFET 2 7 S D l Very Small SOIC Package 3 6 S D l Low Profile (<1.1mm) 4 5 l Available in Tape & Reel G D RDS(on) = 0.030Ω l Lead-Free Top View Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processi

4.4. irf7601.pdf Size:116K _international_rectifier

IRF7606PBF
IRF7606PBF

PD - 9.1261D IRF7601 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 Low Profile (<1.1mm) S D Available in Tape & Reel 4 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

 4.5. irf7607.pdf Size:77K _international_rectifier

IRF7606PBF
IRF7606PBF

PD - 93845 PROVISIONAL IRF7607 HEXFET Power MOSFET Trench Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V N-Channel MOSFET 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 5 Available in Tape & Reel G D RDS(on) = 0.030? Top View Description New trench HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to

4.6. irf7603.pdf Size:113K _international_rectifier

IRF7606PBF
IRF7606PBF

PD - 9.1262D IRF7603 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D N-Channel MOSFET VDSS = 30V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 5 Available in Tape & Reel G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

4.7. irf7604.pdf Size:134K _international_rectifier

IRF7606PBF
IRF7606PBF

PD - 9.1263E IRF7604 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel MOSFET VDSS = -20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 5 Available in Tape & Reel G D RDS(on) = 0.09? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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