IRF7606PBF Datasheet. Specs and Replacement
Type Designator: IRF7606PBF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICRO8
IRF7606PBF substitution
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IRF7606PBF datasheet
irf7606pbf.pdf
PD - 95245 IRF7606PbF HEXFET Power MOSFET l Generation V Technology A 1 8 l Ultra Low On-Resistance S D l P-Channel MOSFET 2 7 VDSS = -30V S D l Very Small SOIC Package 3 6 S D l Low Profile (... See More ⇒
irf7606.pdf
PD - 9.1264C IRF7606 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel MOSFET 2 7 VDSS = -30V S D Very Small SOIC Package 3 6 S D Low Profile (... See More ⇒
irf7603pbf.pdf
PD- 95347 IRF7603PbF Lead-Free www.irf.com 1 02/22/05 IRF7603PbF 2 www.irf.com IRF7603PbF www.irf.com 3 IRF7603PbF 4 www.irf.com IRF7603PbF www.irf.com 5 IRF7603PbF 6 www.irf.com IRF7603PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS D DIM MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91 ... See More ⇒
irf7601.pdf
PD - 9.1261D IRF7601 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 Low Profile (... See More ⇒
Detailed specifications: SIHFP054, SIHFP064, SIHFP140, SIHFP150, SIHFP17N50L, SIHFP21N60L, SIHFP22N50A, SIHFP22N60K, 7N65, IRF7607PBF, IRF7663PBF, IRF7665S2TR1PBF, IRF7665S2TRPBF, IRF7704GPBF, IRF7704PBF, IRF7705GPBF, IRF7705PBF
Keywords - IRF7606PBF MOSFET specs
IRF7606PBF cross reference
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