IRL611 PDF and Equivalents Search

 

IRL611 Specs and Replacement

Type Designator: IRL611

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO220

IRL611 substitution

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IRL611 datasheet

 9.1. Size:186K  1
 irl610.pdf pdf_icon

IRL611

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 9.2. Size:900K  samsung
 irl610a.pdf pdf_icon

IRL611

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 3.3 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒

 9.3. Size:18K  samsung
 irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf pdf_icon

IRL611

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Detailed specifications: IRL540A, IRL540N, IRL540NL, IRL540NS, IRL541, IRL5602S, IRL610, IRL610A, IRFZ24N, IRL620, IRL620A, IRL620S, IRL621, IRL630, IRL630A, IRL630S, IRL631

Keywords - IRL611 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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