IRL611 Datasheet and Replacement
Type Designator: IRL611
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220
IRL611 substitution
IRL611 Datasheet (PDF)
irl610a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 3.3 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf
Datasheet: IRL540A , IRL540N , IRL540NL , IRL540NS , IRL541 , IRL5602S , IRL610 , IRL610A , IRFZ24N , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 , IRL630A , IRL630S , IRL631 .
History: 2SK3774-01S | DMN2004TK
Keywords - IRL611 MOSFET datasheet
IRL611 cross reference
IRL611 equivalent finder
IRL611 lookup
IRL611 substitution
IRL611 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: 2SK3774-01S | DMN2004TK
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