All MOSFET. IRL611 Datasheet

 

IRL611 Datasheet and Replacement


   Type Designator: IRL611
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO220
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IRL611 Datasheet (PDF)

 9.1. Size:186K  1
 irl610.pdf pdf_icon

IRL611

 9.2. Size:900K  samsung
 irl610a.pdf pdf_icon

IRL611

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 3.3 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 9.3. Size:18K  samsung
 irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf pdf_icon

IRL611

Datasheet: IRL540A , IRL540N , IRL540NL , IRL540NS , IRL541 , IRL5602S , IRL610 , IRL610A , MMIS60R580P , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 , IRL630A , IRL630S , IRL631 .

Keywords - IRL611 MOSFET datasheet

 IRL611 cross reference
 IRL611 equivalent finder
 IRL611 lookup
 IRL611 substitution
 IRL611 replacement

 

 
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