IRF7756GPBF Datasheet. Specs and Replacement

Type Designator: IRF7756GPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSSOP-8

IRF7756GPBF substitution

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IRF7756GPBF datasheet

 ..1. Size:236K  international rectifier
irf7756gpbf.pdf pdf_icon

IRF7756GPBF

PD- 96153A IRF7756GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3A l Very Small SOIC Package 0.058@VGS = -2.5V -3.4A l Low Profile (... See More ⇒

 7.1. Size:238K  international rectifier
irf7756.pdf pdf_icon

IRF7756GPBF

PD -94159 IRF7756 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package 0.058@VGS = -2.5V 3.4A Low Profile (... See More ⇒

 8.1. Size:228K  1
irf7752g.pdf pdf_icon

IRF7756GPBF

PD- 96151A IRF7752GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual N-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 30V 0.030@VGS = 10V 4.6A l Low Profile (... See More ⇒

 8.2. Size:226K  1
irf7750g.pdf pdf_icon

IRF7756GPBF

PD-96144A IRF7750GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package VDSS = -20V l Low Profile ( ... See More ⇒

Detailed specifications: IRF7739L2, IRF7748L1, IRF7749L1, IRF7749L2TR1PBF, IRF7749L2TRPBF, IRF7751GPBF, IRF7754GPBF, IRF7755GPBF, IRF1010E, IRF7759L2TR1PBF, IRF7759L2TRPBF, IRF7769L1, IRF7769L2TR1PBF, IRF7769L2TRPBF, IRF7779L2TR1PBF, IRF7779L2TRPBF, IRF7799L2TR1PBF

Keywords - IRF7756GPBF MOSFET specs

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