PD- 96153AIRF7756GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3Al Very Small SOIC Package0.058@VGS = -2.5V -3.4Al Low Profile (

PD -94159IRF7756HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package0.058@VGS = -2.5V 3.4A Low Profile (

PD- 96151AIRF7752GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual N-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package30V 0.030@VGS = 10V 4.6Al Low Profile (

PD-96144AIRF7750GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETl Very Small SOIC PackageVDSS = -20Vl Low Profile (

PD - 96283IRF7759L2TRPbFIRF7759L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond

PD -94030AIRF7752HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual N-Channel MOSFET30V 0.030@VGS = 10V 4.6A Very Small SOIC Package0.036@VGS = 4.5V 3.9A Low Profile (

PD - 96426AUTOMOTIVE GRADEAUIRF7759L2TRAUIRF7759L2TR1 Advanced Process TechnologyAutomotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC andV(BR)DSS75Vother Heavy Load Applications Exceptionally Small Footprint and Low ProfileRDS(on) typ.1.8m High Power Densitymax. 2.3m Low Parasitic Parameters Dual Sided Cooling

PD - 94224IRF7754HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4A Very Small SOIC Package34m@VGS = -2.5V -4.6A Low Profile (

PD - 94002IRF7751HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET-30V 35m@VGS = -10V -4.5A Very Small SOIC Package55m@VGS = -4.5V -3.8A Low Profile (

PD- 96150AIRF7755GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7Al Very Small SOIC Package86m@VGS = -2.5V -2.8Al Low Profile (

PD- 96152AIRF7754GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4Al Very Small SOIC Package34m@VGS = -2.5V -4.6Al Low Profile (

PD -93995AIRF7755HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7A Very Small SOIC Package86m@VGS = -2.5V -2.8A Low Profile (

PD - 93848AIRF7750HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFETVDSS = -20V Very Small SOIC Package Low Profile (

PD - 94174IRF7757HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) Dual N-Channel MOSFET20V 35@VGS = 4.5V 4.8A Very Small SOIC Package40@VGS = 2.5V 3.8A Low Profile (

PD - 96145AIRF7751GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package-30V 35m@VGS = -10V -4.5Al Low Profile (

AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi

IRF7759L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 62nC 3.0V

IRF7751GTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Chan