IRL620A Datasheet and Replacement
Type Designator: IRL620A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
IRL620A substitution
IRL620A Datasheet (PDF)
irl620spbf.pdf

PD- 95591IRL620SPbF Lead-Free07/21/04Document Number: 91302 www.vishay.com1IRL620SPbFDocument Number: 91302 www.vishay.com2IRL620SPbFDocument Number: 91302 www.vishay.com3IRL620SPbFDocument Number: 91302 www.vishay.com4IRL620SPbFDocument Number: 91302 www.vishay.com5IRL620SPbFDocument Number: 91302 www.vishay.com6IRL620SPbFPeak Diode Recovery
irl620s.pdf

PD -9.1218IRL620SHEXFET Power MOSFETSurface MountAvailable in Tape & ReelVDSS = 200VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.80Logic-Level Gate DriveRDS(on) Specified at VGS=4V & 5VFast SwitchingID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized
irl620.pdf

PD -9.1217IRL620HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 200VLogic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5VRDS(on) = 0.80Fast SwitchingEase of parallelingSimple Drive RequirementsID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, rug
Datasheet: IRL540NL , IRL540NS , IRL541 , IRL5602S , IRL610 , IRL610A , IRL611 , IRL620 , K2611 , IRL620S , IRL621 , IRL630 , IRL630A , IRL630S , IRL631 , IRL640 , IRL640A .
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