IRF7799L2TRPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7799L2TRPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 33.5 nS
Cossⓘ - Output Capacitance: 606 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: DIRECTFET
IRF7799L2TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7799L2TRPBF Datasheet (PDF)
auirf7799l2tr.pdf
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AUTOMOTIVE GRADE AUIRF7799L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 250V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 32m Exceptionally Small Footprint and Low Profile max. 38m High Power Density ID (Silicon Limited) 35A Low Parasitic Parameters Qg (typica
auirf7799l2.pdf
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PD - 96421AUTOMOTIVE GRADEAUIRF7799L2TRAUIRF7799L2TR1Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS250V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.32mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 38m High Power DensityID (Silicon Limited)35A Low Parasitic Parameters
irf7799l2pbf.pdf
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IRF7799L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter250V min 30V max 32m@ 10V Primary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectificationl Low Conduction Losses110nC 39nC 4.0V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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