IRF7834PBF Datasheet. Specs and Replacement

Type Designator: IRF7834PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.3 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: SO-8

IRF7834PBF substitution

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IRF7834PBF datasheet

 ..1. Size:189K  international rectifier
irf7834pbf.pdf pdf_icon

IRF7834PBF

PD - 95292 IRF7834PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg (typ.) Processor Power 4.5m @VGS = 10V 30V 29nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance l Fully Chara... See More ⇒

 7.1. Size:207K  international rectifier
irf7834.pdf pdf_icon

IRF7834PBF

PD - 94761 IRF7834 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 4.5m @VGS = 10V 30V 29nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanc... See More ⇒

 7.2. Size:865K  cn vbsemi
irf7834trpbf.pdf pdf_icon

IRF7834PBF

IRF7834TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc... See More ⇒

 8.1. Size:262K  international rectifier
irf7832pbf.pdf pdf_icon

IRF7834PBF

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara... See More ⇒

Detailed specifications: IRF7821PBF-1, IRF7822PBF, IRF7822, IRF7828PBF, IRF7831PBF, IRF7832PBF, IRF7832PBF-1, IRF7832Z, AOD4184A, IRF7842PBF, IRF7853PBF, IRF7854PBF, IRF7855PBF, IRF7862PBF, IRF7902PBF, IRF7904PBF, IRF7904PBF-1

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