IRL640 Specs and Replacement
Type Designator: IRL640
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220
IRL640 substitution
- MOSFET ⓘ Cross-Reference Search
IRL640 datasheet
irl640pbf.pdf
PD - 94964 IRL640PbF Lead-Free 01/30/04 Document Number 91305 www.vishay.com 1 IRL640PbF Document Number 91305 www.vishay.com 2 IRL640PbF Document Number 91305 www.vishay.com 3 IRL640PbF Document Number 91305 www.vishay.com 4 IRL640PbF Document Number 91305 www.vishay.com 5 IRL640PbF Document Number 91305 www.vishay.com 6 IRL640PbF Document Number 91305 ww... See More ⇒
irl640pbf sihl640.pdf
IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si... See More ⇒
irl640 sihl640.pdf
IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si... See More ⇒
Detailed specifications: IRL620, IRL620A, IRL620S, IRL621, IRL630, IRL630A, IRL630S, IRL631, 7N60, IRL640A, IRL640S, IRL641, IRLBA1304, IRLBA1304P, IRLBA3803, IRLBA3803P, 7N65L-TF3-T
Keywords - IRL640 MOSFET specs
IRL640 cross reference
IRL640 equivalent finder
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