IRL640 - описание и поиск аналогов

PD - 94964 IRL640PbF Lead-Free 01/30/04 Document Number 91305 www.vishay.com 1 IRL640PbF Document Number 91305 www.vishay.com 2 IRL640PbF Document Number 91305 www.vishay.com 3 IRL640PbF Document Number 91305 www.vishay.com 4 IRL640PbF Document Number 91305 www.vishay.com 5 IRL640PbF Document Number 91305 www.vishay.com 6 IRL640PbF Document Number 91305 ww

IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si

IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si

PD- 95585 IRL640SPbF Lead-Free 07/20/04 Document Number 91306 www.vishay.com 1 IRL640SPbF Document Number 91306 www.vishay.com 2 IRL640SPbF Document Number 91306 www.vishay.com 3 IRL640SPbF Document Number 91306 www.vishay.com 4 IRL640SPbF Document Number 91306 www.vishay.com 5 IRL640SPbF Document Number 91306 www.vishay.com 6 IRL640SPbF Peak Diode Recovery

IRL640A FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxim

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.18 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.0 Logic-Level Gate Drive Qgd (nC) 38 RDS(on) Specified at VGS = 4 V a

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur