IRL640 datasheet, подбор замены

 ..1. Size:247K  international rectifier
 irl640.pdf 

 ..2. Size:941K  international rectifier
 irl640pbf.pdf 

PD - 94964 IRL640PbF Lead-Free 01/30/04 Document Number 91305 www.vishay.com 1 IRL640PbF Document Number 91305 www.vishay.com 2 IRL640PbF Document Number 91305 www.vishay.com 3 IRL640PbF Document Number 91305 www.vishay.com 4 IRL640PbF Document Number 91305 www.vishay.com 5 IRL640PbF Document Number 91305 www.vishay.com 6 IRL640PbF Document Number 91305 ww

 ..3. Size:1708K  vishay
 irl640pbf sihl640.pdf 

IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si

 ..4. Size:1705K  vishay
 irl640 sihl640.pdf 

IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si

 0.1. Size:263K  international rectifier
 irl640s.pdf 

 0.2. Size:986K  international rectifier
 irl640spbf.pdf 

PD- 95585 IRL640SPbF Lead-Free 07/20/04 Document Number 91306 www.vishay.com 1 IRL640SPbF Document Number 91306 www.vishay.com 2 IRL640SPbF Document Number 91306 www.vishay.com 3 IRL640SPbF Document Number 91306 www.vishay.com 4 IRL640SPbF Document Number 91306 www.vishay.com 5 IRL640SPbF Document Number 91306 www.vishay.com 6 IRL640SPbF Peak Diode Recovery

 0.3. Size:226K  fairchild semi
 irl640a.pdf 

IRL640A FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxim

 0.4. Size:881K  samsung
 irl640a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

 0.5. Size:915K  vishay
 irl640s sihl640s.pdf 

IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.18 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.0 Logic-Level Gate Drive Qgd (nC) 38 RDS(on) Specified at VGS = 4 V a

 0.6. Size:892K  onsemi
 irl640a.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur