IRL640S MOSFET PDF: N-Ch, 200V, 17A. Full specification with pinout and replacement list

..1. Size:263K international rectifier
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..2. Size:986K international rectifier
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PD- 95585 IRL640SPbF Lead-Free 07/20/04 Document Number 91306 www.vishay.com 1 IRL640SPbF Document Number 91306 www.vishay.com 2 IRL640SPbF Document Number 91306 www.vishay.com 3 IRL640SPbF Document Number 91306 www.vishay.com 4 IRL640SPbF Document Number 91306 www.vishay.com 5 IRL640SPbF Document Number 91306 www.vishay.com 6 IRL640SPbF Peak Diode Recovery... See More ⇒

..3. Size:915K vishay
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IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.18 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.0 Logic-Level Gate Drive Qgd (nC) 38 RDS(on) Specified at VGS = 4 V a... See More ⇒

8.1. Size:247K international rectifier
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8.2. Size:941K international rectifier
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PD - 94964 IRL640PbF Lead-Free 01/30/04 Document Number 91305 www.vishay.com 1 IRL640PbF Document Number 91305 www.vishay.com 2 IRL640PbF Document Number 91305 www.vishay.com 3 IRL640PbF Document Number 91305 www.vishay.com 4 IRL640PbF Document Number 91305 www.vishay.com 5 IRL640PbF Document Number 91305 www.vishay.com 6 IRL640PbF Document Number 91305 ww... See More ⇒

8.3. Size:226K fairchild semi
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IRL640A FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxim... See More ⇒

8.4. Size:881K samsung
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Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin... See More ⇒

8.5. Size:1708K vishay
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IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si... See More ⇒

8.6. Size:1705K vishay
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IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si... See More ⇒

8.7. Size:892K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒