IRL640S MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL640S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66(max) nC
trⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
IRL640S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL640S Datasheet (PDF)
irl640spbf.pdf
PD- 95585IRL640SPbF Lead-Free07/20/04Document Number: 91306 www.vishay.com1IRL640SPbFDocument Number: 91306 www.vishay.com2IRL640SPbFDocument Number: 91306 www.vishay.com3IRL640SPbFDocument Number: 91306 www.vishay.com4IRL640SPbFDocument Number: 91306 www.vishay.com5IRL640SPbFDocument Number: 91306 www.vishay.com6IRL640SPbFPeak Diode Recovery
irl640s sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
irl640pbf.pdf
PD - 94964IRL640PbF Lead-Free01/30/04Document Number: 91305 www.vishay.com1IRL640PbFDocument Number: 91305 www.vishay.com2IRL640PbFDocument Number: 91305 www.vishay.com3IRL640PbFDocument Number: 91305 www.vishay.com4IRL640PbFDocument Number: 91305 www.vishay.com5IRL640PbFDocument Number: 91305 www.vishay.com6IRL640PbFDocument Number: 91305 ww
irl640a.pdf
IRL640AFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim
irl640a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin
irl640pbf sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
irl640 sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
irl640a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRL620S , IRL621 , IRL630 , IRL630A , IRL630S , IRL631 , IRL640 , IRL640A , SPW47N60C3 , IRL641 , IRLBA1304 , IRLBA1304P , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , IRLBL1304 , IRLD014 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918