SIHFPG50 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SIHFPG50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 190 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-247AC

SIHFPG50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIHFPG50 Datasheet (PDF)

..1. Size:1082K vishay
irfpg50 sihfpg50.pdf

IRFPG50, SiHFPG50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Isolated Central Mounting HoleQg (Max.) (nC) 190 Fast SwitchingQgs (nC) 23Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9

..2. Size:1088K vishay
sihfpg50.pdf

8.1. Size:1740K vishay
irfpg30pbf sihfpg30.pdf

IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian

8.2. Size:1733K vishay
irfpg30 sihfpg30.pdf

8.3. Size:1596K vishay
irfpg40 sihfpg40.pdf

IRFPG40, SiHFPG40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.5RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 120 COMPLIANT Fast SwitchingQgs (nC) 16Qgd (nC) 65 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian

8.4. Size:1602K vishay
irfpg40pbf sihfpg40.pdf