SIHFS9N60A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHFS9N60A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 170
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 49
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package:
TO-263
SIHFS9N60A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHFS9N60A
Datasheet (PDF)
..1. Size:225K vishay
irfs9n60a sihfs9n60a.pdf 
IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr
..2. Size:212K vishay
sihfs9n60a.pdf
IRFS9N60A, SiHFS9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 49 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 13RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanch
9.1. Size:194K vishay
irfsl9n60a sihfsl9n60a.pdf
IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized
9.2. Size:305K vishay
irfsl11n50a sihfsl11n50a.pdf
IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK
9.3. Size:307K vishay
irfsl11n50apbf sihfsl11n50a.pdf
IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK
9.4. Size:196K vishay
irfsl9n60apbf sihfsl9n60a.pdf
IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized
9.5. Size:341K vishay
irfs11n50apbf sihfs11n50a.pdf
IRFS11N50A, SiHFS11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.52 Low Gate Charge Qg results in Simple DriveQg (Max.) (nC) 52RequirementQgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
