SIHFSL11N50A Datasheet. Specs and Replacement

Type Designator: SIHFSL11N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-262

SIHFSL11N50A substitution

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SIHFSL11N50A datasheet

 ..1. Size:305K  vishay
irfsl11n50a sihfsl11n50a.pdf pdf_icon

SIHFSL11N50A

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK ... See More ⇒

 ..2. Size:307K  vishay
irfsl11n50apbf sihfsl11n50a.pdf pdf_icon

SIHFSL11N50A

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK ... See More ⇒

 8.1. Size:194K  vishay
irfsl9n60a sihfsl9n60a.pdf pdf_icon

SIHFSL11N50A

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 49 Requirement Qgs (nC) 13 Improved Gate, Avalanche and Dynamic Qgd (nC) 20 dV/dt Ruggedness Configuration Single Fully Characterized ... See More ⇒

 8.2. Size:196K  vishay
irfsl9n60apbf sihfsl9n60a.pdf pdf_icon

SIHFSL11N50A

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 49 Requirement Qgs (nC) 13 Improved Gate, Avalanche and Dynamic Qgd (nC) 20 dV/dt Ruggedness Configuration Single Fully Characterized ... See More ⇒

Detailed specifications: SIHFR9120, SIHFR9210, SIHFR9214, SIHFR9220, SIHFR9310, SIHFRC20, SIHFS11N50A, SIHFS9N60A, IRF730, SIHFSL9N60A, SIHFU014, SIHFU020, SIHFU024, SIHFU110, SIHFU120, SIHFU1N60A, SIHFU210

Keywords - SIHFSL11N50A MOSFET specs

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