All MOSFET. SIHFSL11N50A Datasheet

 

SIHFSL11N50A Datasheet and Replacement


   Type Designator: SIHFSL11N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-262
 

 SIHFSL11N50A substitution

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SIHFSL11N50A Datasheet (PDF)

 ..1. Size:305K  vishay
 irfsl11n50a sihfsl11n50a.pdf pdf_icon

SIHFSL11N50A

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

 ..2. Size:307K  vishay
 irfsl11n50apbf sihfsl11n50a.pdf pdf_icon

SIHFSL11N50A

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

 8.1. Size:194K  vishay
 irfsl9n60a sihfsl9n60a.pdf pdf_icon

SIHFSL11N50A

IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized

 8.2. Size:196K  vishay
 irfsl9n60apbf sihfsl9n60a.pdf pdf_icon

SIHFSL11N50A

IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized

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Datasheet: SIHFR9120 , SIHFR9210 , SIHFR9214 , SIHFR9220 , SIHFR9310 , SIHFRC20 , SIHFS11N50A , SIHFS9N60A , IRF730 , SIHFSL9N60A , SIHFU014 , SIHFU020 , SIHFU024 , SIHFU110 , SIHFU120 , SIHFU1N60A , SIHFU210 .

Keywords - SIHFSL11N50A MOSFET datasheet

 SIHFSL11N50A cross reference
 SIHFSL11N50A equivalent finder
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 SIHFSL11N50A replacement

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